QRD1113
Manufacturer:
On Semiconductor
Mfr.Part #:
QRD1113
Datasheet:
Description:
Phototransistor DIP-4 Through Hole Operating Supply Voltage:1.7 V
| Parameter | Value |
|---|---|
| Max Operating Temperature | 85 °C |
| Min Operating Temperature | -40 °C |
| Collector Emitter Breakdown Voltage | 30 V |
| Collector Emitter Voltage (VCEO) | 30 V |
| Power Dissipation | 100 mW |
| Rise Time | 10 µs |
| Fall Time | 50 µs |
| Max Collector Current | 300 µA |
| Dark Current | 100 nA |
| Packaging | Bag |
| Collector Emitter Saturation Voltage | 400 mV |
| Operating Supply Voltage | 1.7 V |
| RoHS | Compliant |
Stock: 3220
Distributors
pcbx
pcbxUnit Price$0.71985
Ext.Price$0.71985
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.71985 | $0.71985 |
| 10 | $0.60957 | $6.09570 |
| 25 | $0.60060 | $15.01500 |
| 50 | $0.59176 | $29.58800 |
| 100 | $0.58306 | $58.30600 |
| 300 | $0.55638 | $166.91400 |
| 500 | $0.53091 | $265.45500 |
| 1000 | $0.51040 | $510.40000 |
| 3000 | $0.49034 | $1471.02000 |
| 5000 | $0.47107 | $2355.35000 |
| 10000 | $0.45140 | $4514.00000 |